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| may 2002 ? 2002 fairchild semiconductor international FDW6923 rev. d(w) FDW6923 p-channel 2.5v specified powertrench ? ? ? ? mosfet with schottky diode general description this p-channel 2.5v specified mosfet is a rugged gate version of fairchild semiconductor?s advanced powertrench process. it is combined with a low forward drop schottky diode which is isolated from the mosfet, providing a compact power solution for asynchronous dc/dc converter applications. applications ? dc/dc conversion features ? ?3.5 a, ?20 v. r ds(on) = 0.045 ? @ v gs = ?4.5 v r ds(on) = 0.075 ? @ v gs = ?2.5 v ? v f < 0.55 v @ 1 a ? high performance trench technology for extremely low r ds(on) ? low profile tssop-8 package d s s g c a a a tssop-8 pin 1 4 3 2 1 5 6 7 8 mosfet absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ? 20 v v gss gate-source voltage 12 v i d drain current ? continuous (note 1) ? 3.5 a ? pulsed ? 30 p d mosfet power dissipation (minimum pad) (note 1) schottky power dissipation (minimum pad) (note 1) 1.2 1.0 w t j , t stg operating and storage junction temperature range -55 to +150 c schottky maximum ratings v rrm repetitive peak reverse voltage 20 v i f average forward current 1.5 a i fm peak forward current 30 a thermal characteristics r ja thermal resistance, junction-to-ambient (minimum pad) (note 1) mosfet: 115 schottky: 130 c/w package marking and ordering information device marking device reel size tape width quantity 6923 FDW6923 13?? 16mm 3000 units FDW6923
FDW6923 rev. d (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a, referenced to25 c ?16 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gssf gate?body leakage, forward v gs = ?12 v, v ds = 0 v ?100 na i gssr gate?body leakage, reverse v gs = 12 v, v ds = 0 v 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.6 ?1.0 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a, referenced to25 c 3 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?3.5 a v gs = ?2.5 v, i d = ?2.7 a v gs =?4.5 v, i d =?3.5a, t j =125 c 36 56 49 45 75 72 m ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?15 a g fs forward transconductance v ds = ?5 v, i d = ?3.5a 13.2 s dynamic characteristics c iss input capacitance 1030 pf c oss output capacitance 280 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 120 pf switching characteristics (note 2) t d(on) turn?on delay time 11 20 ns t r turn?on rise time 18 32 ns t d(off) turn?off delay time 34 55 ns t f turn?off fall time v dd = ?5 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 34 55 ns q g total gate charge 9.7 16 nc q gs gate?source charge 2.2 nc q gd gate?drain charge v ds = ?5v, i d = ?3.5 a, v gs = ?4.5 v 2.4 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?1.25 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?1.25 a (note 2) ?0.6 ?1.2 v i gssr gate?body leakage, reverse v gs = 12 v, v ds = 0 v 100 na schottky diode characteristics t j =25 c 0.6 50 a i r reverse leakage v r = 20v t j =125 c 1 8 ma t j =25 c 0.48 0.55 v v f forward voltage i f = 1a t j =125 c 0.42 0.50 v c t junction capacitance v r = 10v 50 pf notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. r ja is 115 c/w for the mosfet and 130 c/w for the schottky diode when mounted on a minimum pad. 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDW6923 FDW6923 rev. d (w) typical characteristics 0 6 12 18 24 30 012345 -v ds , drain-source voltage (v) v gs = -4.5v -2.5v -3.5v - 3.0v -2.0v -4.0v 0.8 1 1.2 1.4 1.6 0 5 10 15 20 25 30 - i d , drain current (a) v gs = -2.5v -3.5v -4.5v -3.0v -4.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) i d = -3.5a v gs = -4.5v 0 0.03 0.06 0.09 0.12 0.15 1.522.533.544.55 -v gs , gate to source voltage (v) i d = -1.7a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 6 12 18 24 30 0.4 1.3 2.2 3.1 4 -v gs , gate to source voltage (v) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , body diode forward voltage (v) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDW6923 FDW6923 rev. d (w) typical characteristics 0 1 2 3 4 5 036912 q g , gate charge (nc) i d = -3.5a v ds = -5v -10v -15v 0 300 600 900 1200 1500 1800 0 5 10 15 20 -v ds , drain to source voltage (v) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 v f , forward voltage (v) i f , forward current (a) t j = 100 o c t j = 25 o c 0.00000001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0 5 10 15 20 v r , reverse voltage (v) i r , reverse current ( a t j = 125 o c t j = 25 o c figure 9. schottky diode forward voltage. figure 10. schottky diode reverse current. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r ja (t) = r(t) + r ja r ja = 135 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1. transient thermal response will change depending on the circuit board design. FDW6923 !"#$ %"& '(% & % )'"% &' ! %*$%('( (! '&$$% "'+ '% ,'*- %& ''.$ '- '( $$ %+ !% !"'* %("& % % $% %( / 0 ! 11 2 2 34 5 1 23 45 11 3 45 1 1 1 2 1 3 21 6 2 7 1 21 11 2 1 21 11 23 2 $ 2 ( ( % 1 1 1 1 2 2 1 2 3 11 2 1 2 1 1 2 1 1 1 2 1 2 " $ $ ( $ ! " ! #$ ! $ % $& ' ( ) !! *! * + ,$ " ! % - $ " ./ " .0 " .1 2 2 , " $! $ 8$%-' 3% 3 $ 45 |
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